Semiconductor laser device
文献类型：专利
| 作者 | MOGI NAOTO; OKAJIMA MASASUE; MUTOU YUUHEI |
| 发表日期 | 1985-01-09 |
| 专利号 | JP1985003180A |
| 著作权人 | TOSHIBA KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To reduce the anisotropy of the spreading angle of radiant laser beams and the noises of returning beams, and to obtain a laser suitable for a light source for an optical disk by prescribing the width of a striped groove to 3mum or less when an n type GaAlAs clad layer, an un-doped GaAlAs active layer and a p type GaAlAs clad layer are laminated on an n type GaAs substrate and a current stopping layer with the groove is formed on the p type clad layer. CONSTITUTION:An n type Ga0.55Al0.45As clad layer 12, an un-doped Ga0.85Al0.15 As actie layer 13 and a p type Ga0.55Al0.45As clad layer 14 are laminated on an n type GaAs substrate 11 of a (100) face orientation and grown in a liquid phase in an epitaxial manner, and an n type GaAs current stopping layer 15 is applied on the layer 14. The upper section of the layer 15 is coated with a photo-resist 21 with a striped window, and a striped groove 22 penetrating the layer 15 is bored in the window through etching. Width is prescribed to 3mum or less in a section being in contact with the layer 4 of the groove 22 at that time, and an aspect ratio of 3 or less and a laser spreading angle of 15 deg. or less are obtained. |
| 公开日期 | 1985-01-09 |
| 申请日期 | 1983-06-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89378]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA KK |
| 推荐引用方式 GB/T 7714 | MOGI NAOTO,OKAJIMA MASASUE,MUTOU YUUHEI. Semiconductor laser device. JP1985003180A. 1985-01-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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