Semiconductor laser device
文献类型：专利
| 作者 | KUME ICHIRO; OTA YOICHIRO; TAKAMIYA SABURO; SAKAI TOSHIYA |
| 发表日期 | 1988-05-26 |
| 专利号 | JP1988122192A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To efficiently confine the light at an active layer inside a stripe-like groove and to realize a high-output and long-life laser by a method wherein a light-guide layer of a first conductivity type and an active layer whose refractive index is larger than said light-guide layer are formed in succession along the shape of a stripe-like groove and the active layer is curved inside the stripe width like an arc with a view to emitting a near-field image of the laser at one point. CONSTITUTION:The section of an n-type GaAs current-blocking layer 3, which is grown on a P-type AlXGa1-XAs clad layer 2, is an inverted trapezoid; the P-type AlXGa1-As clad layer 2 located at the bottom of the layer is dug in the shape of an arc and a stripe-like groove 10 is exposed. On said stripe-like groove 10 which is dug in the shape of the arc, a P-type AlGaAs light-guide layer 4, an active layer 5 and an N-type AlGaAs upper clad layer 6 are formed without deforming the shape of the arc. If an electric current is injected to a semiconductor laser device, the electric current is concentrated near the open part at the stripe-like groove 10 and flows there. Because the part where the electric current is easily concentrated most (the center of the active layer) is curved like the arc, the distance between the horizontal direction of a light-emitting part and the light-guide layer becomes short and it is possible to confine the light efficiently. |
| 公开日期 | 1988-05-26 |
| 申请日期 | 1986-11-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89393]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KUME ICHIRO,OTA YOICHIRO,TAKAMIYA SABURO,et al. Semiconductor laser device. JP1988122192A. 1988-05-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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