Manufacture of quantum thin wire structure
文献类型：专利
| 作者 | HAMAO NOBORU |
| 发表日期 | 1991-04-10 |
| 专利号 | JP1991084982A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of quantum thin wire structure |
| 英文摘要 | PURPOSE:To improve controllability of the width of an impurity doped region by composing a diffusion controlling layer of a crystal material having a lower impurity diffusion speed than that in a second semiconductor layer. CONSTITUTION:A growing substrate is took out from a growing chamber and Zn, as an impurity, is diffused so far as it reaches a quantum well structure 3. At this time, as the Al composition ratio of a diffusion control layer 4 is smaller than that of a P-type clad layer 5, the diffusion speed of Zn in the diffusion control layer 4 becomes lower than that in the P-type clad layer 5. Accordingly, the diffusion control layer 4 acts, by using the Zn diffusion as a mask, so that Zn can't reach the quantum well structure 3 located right under the diffusion control layer 4. Then, a quantum thin wire structure 7 is formed in order to prevent disorder. At this time, the diffusion quantity in the parallel direction with a growing layer surface is determined according to the thickness of a P-type confinement layer 12. Accordingly, by setting the thickness of the P-type confinement layer 12 to be 1000Angstrom or less, horizontal extension of the diffusion can be restrained under that value and the quantum thin wire structure can be formed with good controllability. |
| 公开日期 | 1991-04-10 |
| 申请日期 | 1989-08-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89394]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | HAMAO NOBORU. Manufacture of quantum thin wire structure. JP1991084982A. 1991-04-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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