Semiconductor laser device
文献类型：专利
| 作者 | YAGI TETSUYA; NANBARA SEIJI |
| 发表日期 | 1990-02-27 |
| 专利号 | JP1990058287A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a device whose reactive current component which does not contribute to laser oscillation is small by a method wherein, from a GaAs buffer layer of second conductivity type to a second clad layer, an active layer and a half of the thickness of a first clad layer just under the buffer layer, second conductivity type dopant is diffused until the above layers are inverted to the second conductivity type. CONSTITUTION:The title device is constituted of the following: a first clad layer 2 of AlGaAs, an active layer 3 of AlGaAs, and a second clad layer 4 of AlGaAs which are laminated on a first conductivity type substrate 1 of GaAs; a buffer layer 5 of GaAs, a first current blocking layer 6 of AlGaAs, a second current blocking layer 7 of GaAs, a third current blocking layer 8 of AlGaAs, and a fourth current blocking layer 9 of GaAs which are laminated on the part except a stripe trench 12; a third clad layer 10 of AlGaAs and a contact layer 11 of GaAs which are laminated so as to fill the stripe trench 12. A region 13 is formed by diffusing second conductivity type dopant into the second clad layer 4, the active layer 3 and a half of the thickness of the first clad layer 2 just under the buffer layer 5, until the layers are inverted to the second conductivity type. |
| 公开日期 | 1990-02-27 |
| 申请日期 | 1988-08-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89396]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | YAGI TETSUYA,NANBARA SEIJI. Semiconductor laser device. JP1990058287A. 1990-02-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。