Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | MORIMOTO MASAHIRO |
| 发表日期 | 1989-08-31 |
| 专利号 | JP1989217987A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To decrease parasitic capacity, by insulating with air instead of forming an insulating film within mesa grooves and forming an electrode to bridge over the mesa grooves so that current is supplied only to an active region. CONSTITUTION:First and second buried layers 15, 16 are grown such that an active region 13 on a substrate 11 is buried therewith. A clad layer 17 is formed over the active layer 13 and a contact layer 18 is formed on the outermost part. An SiO2 film is formed on the contact layer 18 and an aperture is formed therein by etching the same. This aperture is a region where the active region 13 and mesa grooves on the opposite sides thereof are to be formed. An ohmic electrode 14 is formed and patterned to provide slits 21 therein. Window patterns for etching the mesa grooves are formed on the contact layer 18 under the electrode 14. Finally, the InP buried layers are selectively etched by using the etching windows as protective masks so that the mesa grooves 12 are formed as close as possible 40 each other, until they reach the substrate 1 |
| 公开日期 | 1989-08-31 |
| 申请日期 | 1988-02-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89398]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | MORIMOTO MASAHIRO. Semiconductor laser and manufacture thereof. JP1989217987A. 1989-08-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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