中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
A semiconductor optoelectronic component including a distributed Bragg reflector and electro-absorption modulator

文献类型:专利

作者DAVID, JAMES, CLARK; PAUL, MARSHALL, CHARLES
发表日期2005-06-29
专利号GB2409570A
著作权人AVAGO TECHNOLOGIES FIBER IP (SINGAPORE) PTE. LTD.
国家英国
文献子类发明申请
其他题名A semiconductor optoelectronic component including a distributed Bragg reflector and electro-absorption modulator
英文摘要A semiconductor optoelectronic component I includes a monolithically integrated distributed Bragg reflector section 4, lying between a waveguide section 3 for example , a laser diode and an electro-absorption section 6. Each of the sections has a waveguide layer (9, 10, 11) which is butt-coupled and aligned so that optical radiation 50 may be conveyed between adjacent sections 9, 10; 10, 1 Preferably, a laser diode section 3 includes a quarternary multiple quantum well of InGaAsP as an active layer 9. Preferably, the waveguide layer 9 of the diode laser 3 is thicker than the waveguide layer 11 of the EAM section 6. The waveguide layer 10 of the DBR section may be thicker than the waveguide layers 9, 10 of either the laser diode section 3 or of the EAM section 6. There is also a method for fabricating a semiconductor optoelectronic component which includes a waveguide layer which is butt-coupled and aligned with adjacent waveguide layers.
公开日期2005-06-29
申请日期2003-10-10
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/89399]  
专题半导体激光器专利数据库
作者单位AVAGO TECHNOLOGIES FIBER IP (SINGAPORE) PTE. LTD.
推荐引用方式
GB/T 7714
DAVID, JAMES, CLARK,PAUL, MARSHALL, CHARLES. A semiconductor optoelectronic component including a distributed Bragg reflector and electro-absorption modulator. GB2409570A. 2005-06-29.

入库方式: OAI收割

来源:西安光学精密机械研究所

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