Buried type distorted superlattice semiconductor laser
文献类型：专利
| 作者 | YAMADA HIROHITO |
| 发表日期 | 1991-12-24 |
| 专利号 | JP1991292789A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Buried type distorted superlattice semiconductor laser |
| 英文摘要 | PURPOSE:To prevent a stress from being induced between a well and a buried layer by a method wherein a part coming into contact with the well is filled with a semiconductor material which is possessed of the same lattice constant as the well, higher than the well in energy gap, and smaller than the well in refractive index. CONSTITUTION:An N-InP buffer layer 17 and an N-InP clad layer 13 are successively grown on an N-InP substrate 18 through an MOVPE method, then an In0.6Ga0.4As distorted well 12 of composition whose lattice constant is larger than that of InP is made to grow thereon, and a P-InP 11 is grown. In succession, this laminated structure is processed into a stripe through etching. A P-InP 14, an Al0.4Ga0.6As0.2 Sb0.8 15, and an N-InP 19 are successively laminated on both the sides of the stripe to make the stripe buried. By this setup, the current block layer 15 is able to effectively trap light and carriers at the same time, and an excellent buried type supperlattice semiconductor laser with no defect such as crystal dislocation can be obtained. |
| 公开日期 | 1991-12-24 |
| 申请日期 | 1990-04-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89404]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | YAMADA HIROHITO. Buried type distorted superlattice semiconductor laser. JP1991292789A. 1991-12-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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