半導体レーザ装置
文献类型：专利
| 作者 | 中塚 慎一; 河野 敏弘; 斉藤 勝利; 梶村 俊 |
| 发表日期 | 1996-09-19 |
| 专利号 | JP2564343B2 |
| 著作权人 | 株式会社日立製作所 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ装置 |
| 英文摘要 | PURPOSE:To make the light spot size at a laser edge side region larger than that at a central region to increase the spot size at the laser edge side region by allowing an optical waveguide to use mainly the gain difference between inside and outside of a stripe at the laser center, and to use mainly the refraction factor difference between the inside and outside of the stripe near a laser edge side. CONSTITUTION:Recesses 2 of a GaAs substrate and an n-GaAs layer 3 are formed on a p-GaAs substrate 1 then a groove 4 is formed which becomes an optical waveguide. The groove 4 is formed by a width of about 5-7mum in an area between the recess 2 of the substrate 1, and in other areas, it is formed by about 3-5mum. The depths of the groove 4 and the recess 2 are about 2mum and 4mum, respectively. Then an n-Ga0.5Al0.5As clad layer 5, an undoped Ga0.86Al0.14As active layer 6, an n-Ga0.5Al0.5As clad layer 7 and an n-GaAs cap layer 8 are caused to successively grow. Then, an AuGaNi/Cr/Au electrode 9 and a Cr/Au electrode 10 are formed and a reflection surface is formed by carrying out cleavage at a section 2-2. |
| 公开日期 | 1996-12-18 |
| 申请日期 | 1987-12-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89405]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社日立製作所 |
| 推荐引用方式 GB/T 7714 | 中塚 慎一,河野 敏弘,斉藤 勝利,等. 半導体レーザ装置. JP2564343B2. 1996-09-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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