Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | OTA KAZUNARI; KUME MASAHIRO; HIROSE MASANORI |
| 发表日期 | 1992-01-27 |
| 专利号 | JP1992023379A |
| 著作权人 | 松下電子工業株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To improve the surge breakdown strength of a semiconductor laser by a method wherein a semiconductor electrode layer, which is formed so as to reach a plane identical with the upper part of a mesa part and has the same conductivity type as that of a second clad layer, is provided on a semiconductor current constricting layer, which has a conductivity type reverse to that of the second clad layer and has a height not exceeding the height of the mesa part. CONSTITUTION:A P-type second Ga0.5Al0.5As clad layer 4 is etched using a mesa etching mask consisting of an insulating film 6 in such a way that the central part of the layer 4 is formed into a striped mesa type. At this time, one part of the layer 4 is left and an active layer 3 is prevented from being exposed to the atmosphere. After this, an N-type GaAs semiconductor current constricting layer 8 is selectively crystal-grown by an MOVPE method as the insulating film mask is left. The film thickness of this layer 8 is formed so as not to exceed the height of a mesa part. Subsequently, a P-type GaAs semiconductor electrode layer 9 is selectively crystal- grown on the layer 8 by an MOVPE method. The layer 9 is grown until the sum total of the film thickness of the layers 9 and 8 becomes a film thickness to reach a plane just identical with the upper part of the mesa part, the film 6 is removed with a phosphoric acid and a semiconductor laser is completed. |
| 公开日期 | 1992-01-27 |
| 申请日期 | 1990-05-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89416]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 松下電子工業株式会社 |
| 推荐引用方式 GB/T 7714 | OTA KAZUNARI,KUME MASAHIRO,HIROSE MASANORI. Semiconductor laser and manufacture thereof. JP1992023379A. 1992-01-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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