Surface light-emitting type semiconductor laser device and manufacture thereof
文献类型：专利
| 作者 | NOMURA YOSHITOKU; SHINOZAKI KEISUKE; ISHII JUN |
| 发表日期 | 1986-04-22 |
| 专利号 | JP1986079280A |
| 著作权人 | AGENCY OF IND SCIENCE & TECHNOL |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Surface light-emitting type semiconductor laser device and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain a laser continuously oscillating at room temperature at a low current value by a method wherein columnar multilayer bodies projected onto a semiconductor substrate are formed, the top section and bottom of the multilayer bodies are used as reflecting regions, a central region in intermediate sections is employed as an active layer having multiple quantum well structure and a clad layer is shaped in an outer circumferential region in the active layer. CONSTITUTION:An insulator thin-film 12 is applied onto an N type GaAs substrate 11, a circular hole is bored at the central section of the thin-film, and columnar AlGaAs layers 13 having Al compositions of 20% and 40% are laminated and grown alternately into the hole. Annular impurity diffusion regions into which Al is distributed uniformly are formed in outer circumferential regions of the layers 13, and columnar active regions 17 are constituted by the central sections 15 of the layers 13 and the diffusion regions 16 in the outer circumferences. Upper reflecting regions 18 utilizing Bragg reflection are superposed onto the regions 17, and the base of the layers 13 is used as a lower reflecting region. P type regions 19 are made to be contained in the active regions 17 at that time, and P-N junctions 20 are formed. Accordingly, the active regions are shaped in multiple quantum well structure, and beams are confined effectively, thus improving luminous efficiency. |
| 公开日期 | 1986-04-22 |
| 申请日期 | 1984-09-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89422]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AGENCY OF IND SCIENCE & TECHNOL |
| 推荐引用方式 GB/T 7714 | NOMURA YOSHITOKU,SHINOZAKI KEISUKE,ISHII JUN. Surface light-emitting type semiconductor laser device and manufacture thereof. JP1986079280A. 1986-04-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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