Semiconductor laser
文献类型：专利
| 作者 | MARUNO SHIGEMITSU; NOMURA YOSHITOKU; SUGIMOTO HIROSHI; MORISHITA YOSHITAKA |
| 发表日期 | 1992-03-16 |
| 专利号 | JP1992082286A |
| 著作权人 | HIKARI GIJIYUTSU KENKIYUU KAIHATSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To increase the implantation efficiency of the electron and the hole into the quantum well region to be a light emitting layer by a method wherein, in an n type clad layer, the ratio of the hole implanted into an active layer and running out of the active layer is reduced while, in a p type clad layer, the ratio of the electrons implanted into the active layer and running out of the active layer is reduced. CONSTITUTION:An InGaAs active layer 3 is single quantum well structured and then an n type InP clad layer 4 and a p type AlInAs clad layer 5 are multiple quantum well structured while the n=1 quantum level of the electrons and the n=1 quantum level of the hole of the layer 4 and the layer 5 are made larger than that of the active layer 3. Furthermore, potential barrier to the hole of the n type clad layer 4 is made larger than that to the hole of the p type clad layer 5 likewise the potential barrier to the electrons of the p type clad layer 5 is made larger than that to the electrons of the n type clad layer 4. Through these procedures, the implantation efficiency of the electrons and hole into the active layer 3 can be increased thereby decreasing the oscillation threshold value current density simultaneously improving the modulation characteristics as well as the temperature characteristics during the laser oscillation time. |
| 公开日期 | 1992-03-16 |
| 申请日期 | 1990-07-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89424]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HIKARI GIJIYUTSU KENKIYUU KAIHATSU KK |
| 推荐引用方式 GB/T 7714 | MARUNO SHIGEMITSU,NOMURA YOSHITOKU,SUGIMOTO HIROSHI,et al. Semiconductor laser. JP1992082286A. 1992-03-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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