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文献类型：专利
| 作者 | OOSHIMA MASAAKI |
| 发表日期 | 1988-01-18 |
| 专利号 | JP1988002156B2 |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To enable to obtain a pulse-shaped laser light only by applying a DC bias by constructing to reduce a current flowed to a laser side simultaneously upon oscillating of a semiconductor laser. CONSTITUTION:An n type AlGaAs first clad layer 2, an n type AlGaAs active layer 3 and a p type AlGaAs second clad layer 4 are sequentially grown on an n type GaAs substrate 1 which has a (100) plane. Then, a grown layer part is selectively removed. The surface azimuth (F) of the removed part is 11 Subsequently, a non-doped n type GaAs layer 5 is grown. Thereafter, an electrode 6 is mounted at the substrate 1 side, an insulating film 7 is mounted at the grown layer side, and further ohmic electrode 8 is mounted. A current flowed to the semiconductor laser element of this configuration becomes threshold current, and when the oscillation is started, the conductive layer of the layer 5 which has a band gap smaller than the photo energy of the laser light is improved by the oscillation light, the current of the laser side is reduced, and the oscillation is stopped. The conductivity of the layer 5 is lowered simultaneously upon the stopping, and the laser is again oscillated. |
| 公开日期 | 1988-01-18 |
| 申请日期 | 1982-06-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89429]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | OOSHIMA MASAAKI. -. JP1988002156B2. 1988-01-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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