中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Manufacture of semiconductor fine structure

文献类型:专利

作者FUKUZAWA TADASHI
发表日期1988-06-28
专利号JP1988155713A
著作权人HITACHI LTD
国家日本
文献子类发明申请
其他题名Manufacture of semiconductor fine structure
英文摘要PURPOSE:To easily manufacture many quantum fine structures by etching Si grown in a single quantum well structure in an arbitrary shape, further growing a semiconductor crystal, then heat treating it to diffuse Si, and partly deleting a semiconductor hetero boundary. CONSTITUTION:A GaAs quantum well layer 3 is grown on the barrier layer 2 of a substrate Then, an Si epitaxial layer 4 is grown. A wafer is fed to an etching chamber, an electron beam 6 is irradiated in an XeF2 gas, and Si- etched to obtain the remaining pattern 7 of the Si. It is again returned to the single crystal growing chamber, and a barrier layer 8 and a GaAs quantum well layer 9 are grown. Then, the Si is grown, an Si stripe 10 is formed, and a barrier layer 11 and a cap layer 12 are grown. Then, a heat treatment is conducted, and with an Si stripe 13 as a diffusion source the Si is diffused in the quantum well and the barrier layer. The mixed crystal 14 of the quantum well and the barrier layer is formed at a hetero boundary in which the Si is diffused. A buried hetero structure is obtained in a region 15 in which the Si is not diffused.
公开日期1988-06-28
申请日期1986-12-19
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/89432]  
专题半导体激光器专利数据库
作者单位HITACHI LTD
推荐引用方式
GB/T 7714
FUKUZAWA TADASHI. Manufacture of semiconductor fine structure. JP1988155713A. 1988-06-28.

入库方式: OAI收割

来源:西安光学精密机械研究所

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