Manufacture of semiconductor fine structure
文献类型：专利
| 作者 | FUKUZAWA TADASHI |
| 发表日期 | 1988-06-28 |
| 专利号 | JP1988155713A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor fine structure |
| 英文摘要 | PURPOSE:To easily manufacture many quantum fine structures by etching Si grown in a single quantum well structure in an arbitrary shape, further growing a semiconductor crystal, then heat treating it to diffuse Si, and partly deleting a semiconductor hetero boundary. CONSTITUTION:A GaAs quantum well layer 3 is grown on the barrier layer 2 of a substrate Then, an Si epitaxial layer 4 is grown. A wafer is fed to an etching chamber, an electron beam 6 is irradiated in an XeF2 gas, and Si- etched to obtain the remaining pattern 7 of the Si. It is again returned to the single crystal growing chamber, and a barrier layer 8 and a GaAs quantum well layer 9 are grown. Then, the Si is grown, an Si stripe 10 is formed, and a barrier layer 11 and a cap layer 12 are grown. Then, a heat treatment is conducted, and with an Si stripe 13 as a diffusion source the Si is diffused in the quantum well and the barrier layer. The mixed crystal 14 of the quantum well and the barrier layer is formed at a hetero boundary in which the Si is diffused. A buried hetero structure is obtained in a region 15 in which the Si is not diffused. |
| 公开日期 | 1988-06-28 |
| 申请日期 | 1986-12-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89432]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | FUKUZAWA TADASHI. Manufacture of semiconductor fine structure. JP1988155713A. 1988-06-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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