Apparatus for production of semiconductor device
文献类型：专利
| 作者 | TANAKA TOSHIO; SOGOU TOSHIO; TAKAMIYA SABUROU; KUME ICHIROU |
| 发表日期 | 1983-10-25 |
| 专利号 | JP1983182221A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Apparatus for production of semiconductor device |
| 英文摘要 | PURPOSE:To control carrier density precisely by a method wherein, on at least one side of a liquid reservoir containing a substance with high vapor pressure, another liquid reservoir without containing such a substance and contributing to the formation of a semiconductor in order to prevent mixing. CONSTITUTION:On a slider 6 having a holding groove of an N type GaAs substrate 1, there are provided a liquid reservoir 10 for an N type AlGaAs 2 incorporated with Te and Se, a liquid reservoir 11 for an N type GaAs active layer 3, a liquid reservoir 14 without containing a substance with high vapor pressure and mpt contributing to the formation of a semiconductor, and preventing mixture, a liquid reservoir 12 for a P type AlGaAs 4 incorporated with Zn and Cd, and a liquid reservoir for a connecting layer 5 of a P type GaAs incorporated with Zn, Cd, Si, Ge, and 5, each being arranged via a partition 8 and covered with a lid 9. After epitaxial layers are successively formed from crystals in the liquid reservoirs 10, 11, the liquid reservoir is allowed to quickly pass therethrough. For this reason, the liquid reservoir 14 does not practically contributes to the formation of the semiconductor. Then epitaxial layer formation is carried out in the liquid reservoirs 12, 13 successively. According to this construction, substances badly affect such as Zn, Cd are not allowed to mix with the adjacent liquid reservoir, so that the carrier density can be controlled precisely. |
| 公开日期 | 1983-10-25 |
| 申请日期 | 1982-04-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89433]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | TANAKA TOSHIO,SOGOU TOSHIO,TAKAMIYA SABUROU,et al. Apparatus for production of semiconductor device. JP1983182221A. 1983-10-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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