Structure of semiconductor light emitting element and manufacture thereof
文献类型：专利
| 作者 | HOSOI YOJI; TSUBOTA TAKASHI |
| 发表日期 | 1989-03-13 |
| 专利号 | JP1989066986A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Structure of semiconductor light emitting element and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain a low-threshold short wave length semiconductor laser by forming an upper current constriction layer having an electrode stripe width as wide as the width of the V groove of internal current constriction layer. CONSTITUTION:Crystal growth of n-GaAs internal current constriction layer 22 is performed on a P-GaAs substrate 21 and V groove is formed by performing photolithography and an etchant of ammonium, hydrogen peroxide water, and water. Then, crystal growth of each layer of a clad layer 23 of p-AluGa1-uAs, an active layer 24 of P-AlzGa1-zAs, a clad layer 25 of n-AlyGa1-yAs, a cap layer 26 of n-AlxGa1-xAs, and an upper-part current narrow layer 27 of p-GaAs is performed in sequence. Then, a resist pattern 29 is formed by photolithography. And then, an electrode stripe is formed on the upper-part current constriction layer 27 of P-GaAs by etchant. After removing a photoresist pattern 29, an n-side electrode 28 (AuGe Ni/Au) is formed on the upper-part current constriction layer 27 and a P-side electrode 31 (AuZn) is formed on a P-GaAs substrate 2 |
| 公开日期 | 1989-03-13 |
| 申请日期 | 1987-09-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89437]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HOSOI YOJI,TSUBOTA TAKASHI. Structure of semiconductor light emitting element and manufacture thereof. JP1989066986A. 1989-03-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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