Manufacture of semiconductor laser
文献类型：专利
| 作者 | FUKUNAGA TOSHIAKI; HASHIMOTO AKIHIRO; WATANABE NOZOMI; KAMIJO TAKESHI |
| 发表日期 | 1989-01-06 |
| 专利号 | JP1989002386A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a laser having excellent reliability by forming a striped mask on the surface of the center of a superlattice optical guide layer on the upper side of an active layer, forming an organic metal by vapor growth on both sides of the mask and bringing a superlattice except a central region to a disordered state through thermal diffusion. CONSTITUTION:N-AlxGa1-xAs 42 and an active layer 44 including an I-Aly Ga1-yAs barrier layer 44a and an I-GaAs quantum well layer 44b are superposed onto an N- GaAs substrate 40, and oscillation threshold currents are reduced by selecting thickness and an oscillation wavelength is determined by choosing the width of a well. A P- AlyGa1-yAs waveguide layer 46 and a P-superlattice waveguide layer 45 are superposed. A striped mask 50 consisting of Si3N4 is executed, an Si adding layer 52 in high concentration is formed by vapor growth on a side section 48b, the layer 52 is coated with an Si3N4 layer 44 and Si is thermally diffused and a superlattice except a central section 48a is brought to a disordered state, and a current constriction layer 56 is formed. A clad layer 60 and a connecting layer 62 are stacked, and upper and lower electrodes 64, 66 are attached, thus completing a semiconductor laser. According to the constitution, there is no possibility of the deterioration and damage of the quality of a crystal, thus lengthening the lifetime of a laser element and improving reliability thereof. |
| 公开日期 | 1989-01-06 |
| 申请日期 | 1987-06-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89439]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | FUKUNAGA TOSHIAKI,HASHIMOTO AKIHIRO,WATANABE NOZOMI,et al. Manufacture of semiconductor laser. JP1989002386A. 1989-01-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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