Semiconductor laser device
文献类型：专利
| 作者 | YOSHIZAWA MISUZU; YAMASHITA SHIGEO; OISHI AKIO; KAJIMURA TAKASHI |
| 发表日期 | 1988-08-29 |
| 专利号 | JP1988208290A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain an element characterized by a low threshold current value and high reliability, by providing a light-intensity-distribution correcting layer in a self-alignment type semiconductor laser device having an interface improving layer, making the light-intensity distribution in the vertical direction with respect to a bonding surface to be a symmetrical pattern, and efficiently guiding the light to an active layer. CONSTITUTION:A layer having a small Al mol ratio, i.e., a light-intensity- distribution correcting layer 3, which is a layer, whose refractive index is larger than those of n-type clad layers 2 and 4, is provided on the sides of the n-type clad layers 2 and 4 like an interface improving layer 7. When the light-intensity- distribution correcting layer 3 is provided between the first n-GaAlAs clad layer 2 and the second n-GaAlAs clad layer 4, the distribution of the light intensity (c) in the vertical direction with respect to a bonding surface becomes symmetrical. Therefore the light can be guided to an active layer (e) efficiently. Thus the element characterized by a low threshold current value and high reliability can be obtained. |
| 公开日期 | 1988-08-29 |
| 申请日期 | 1987-02-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89440]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | YOSHIZAWA MISUZU,YAMASHITA SHIGEO,OISHI AKIO,et al. Semiconductor laser device. JP1988208290A. 1988-08-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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