Two-wavelength semiconductor laser
文献类型：专利
| 作者 | ISHII HIROAKI; MITSUMA TAKASHI |
| 发表日期 | 1992-11-06 |
| 专利号 | JP1992315489A |
| 著作权人 | JAPAN AVIATION ELECTRON IND LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Two-wavelength semiconductor laser |
| 英文摘要 | PURPOSE:To provide a two-wavelength semiconductor laser which emits two laser lights having different wavelengths at a narrow interval. CONSTITUTION:A first active layer 4 is interposed to be hold between a first clad layer 3 and a second clad layer 5 to form a vertical p-n junction on an n-type substrate A second active layer 7 and a third clad layer 8 are laminated on the layer 5. A p-type impurity is implanted from a partial region of a third clad layer 8 to the midway of the layer 5 to form a p-type impurity implanted region 9. A lateral p-n junction is formed in a boundary between the region 9 and a non-impurity implanted region in the layers 8 and 7. When the layer 4 emits a light, a part from the layer 5 to the layer 8 is operated as an upper side clad. When the layer 7 emits a light, a part from the layer 5 to the layer 3 is operated as a lower side clad. Accordingly, even if the layer 5 is thin, the light confinement can sufficiently be performed. |
| 公开日期 | 1992-11-06 |
| 申请日期 | 1991-04-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89443]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | JAPAN AVIATION ELECTRON IND LTD |
| 推荐引用方式 GB/T 7714 | ISHII HIROAKI,MITSUMA TAKASHI. Two-wavelength semiconductor laser. JP1992315489A. 1992-11-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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