Buried structure semiconductor laser
文献类型：专利
| 作者 | YANASE TOMOO; ITO TOMOHIRO; ASATA SUSUMU; RANGU HIROYOSHI |
| 发表日期 | 1988-06-06 |
| 专利号 | JP1988133587A |
| 著作权人 | NIPPON ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Buried structure semiconductor laser |
| 英文摘要 | PURPOSE:To obtain excellent high speed modulation characteristics and excellent efficiency by providing a conductivity type block layer between a high resistance semiconductor layer and a conductivity type semiconductor substrate and by making the block layer of an opposite conductivity type to that of the substrate and to be a depletion layer. CONSTITUTION:After an active region is made into a mesa state of transverse width approx. 1 micron by chemically etching double hetero crystal obtained in a stripe state by a normal method, a conductivity type block layer 16 made of Zn doped InP is grown by a hidride vapor growth, and then, a high resistance semiconductor layer 15 made of Fe doped InP is formed. If a current is given to the p-side electrode 17 and the n-side electrode 18 of such a structure semiconductor laser, the current flows in a current path (a mesa stripe state double hetero structure consisting of a p-clad layer 12, the active region 11 and an n-buffer layer 13) but does not flow in a current block region (consisting of the high resistance semiconductor layer 15 and the conductivity type block layer 16). For this reason, oscillation is made with little leakage current to a high output In this structure, the capacitance of the current block region is also made very small, a time constant is made very short and high speed modulation is possible. |
| 公开日期 | 1988-06-06 |
| 申请日期 | 1986-11-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89449]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | YANASE TOMOO,ITO TOMOHIRO,ASATA SUSUMU,et al. Buried structure semiconductor laser. JP1988133587A. 1988-06-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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