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文献类型：专利
| 作者 | HIRAYAMA NORYUKI; OOSHIMA MASAAKI; TAKENAKA NAOKI; KINO YUKIHIRO |
| 发表日期 | 1989-12-19 |
| 专利号 | JP1989059754B2 |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To obtain the titled device of high performance by reduction of the current flowing through the part other than an active layer by a method wherein both sides of the active layer of a double hetero structure in parallel with the junction are provided with a semi-insulation layer having a smaller refractive index than the active layer and increased in the resistance by impurity doping. CONSTITUTION:A Cd-doped semi-insulation InP 12 and an N-InGaAsP 13 are successively grown on an (100)N-InP 11 and covered with an SiO2. A window is opened to a width of 5mum or less by selective etching of the film 20 in the direction, a groove reaching the substrate 11 being formed by the use of two kinds of etchant while the enlargement of the window width is prevented, and the groove being then made 2mum or less in the lower part, and V-shaped at the bottom. A mask 20 is removed, and an N-InP clad layer 14, an InGaAsP active layer 15, a P-InP clad layer 16, and a P-InGaAsP cap layer 17 are superposed; a clad layer 14' and an active layer 15' are buried in the groove, and the layer 15' positioned at the middle of the layer thickness of a high resistant layer 12. With this construction, since the layer 12 cuts off the current, the leakage current due to the deterioration in structure or of the P-N junction or due to defects can be reduced, and then the high performance laser can be obtained. |
| 公开日期 | 1989-12-19 |
| 申请日期 | 1983-10-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89450]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HIRAYAMA NORYUKI,OOSHIMA MASAAKI,TAKENAKA NAOKI,et al. -. JP1989059754B2. 1989-12-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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