Semiconductor laser
文献类型：专利
| 作者 | UEHARA SHINGO; OE KUNISHIGE; OKAYASU MASANOBU; TAKESHITA TATSUYA; KOGURE OSAMU |
| 发表日期 | 1991-05-28 |
| 专利号 | JP1991125487A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To provide a small high-power laser capable of stable oscillation at a wavelength of about 0.98mum by forming a quantum well structure of an active well layer of InxGa1-xAs and a barrier layer of GaAs or AlyGa1-yAs, where the proportion of indium and the well layer thickness are determined properly. CONSTITUTION:A semiconductor laser has a quantum well structure in which a well layer is sandwiched between barrier layers. The well layer 5 is formed of In0.2Ga0.8As of a 110 thickness. The wavelength of oscillation is about 980nm. More generally, the well layer 5 is formed of 30 to 200 Angstrom thick InxGa1-xAs, where 0.15<=X<=0.3. In this case, the wavelength of oscillation is about 980+ or -3nm. A contact layer 8 and a clad layer 7 are processed to form a ridge having a thickness of about 3mum. An SiO2 film formed by sputtering is patterned into 3mum-wide stripes, and it is used as a mask to etch the contact layer 8 and clad layer 7 by RIE using BCl3. After the ridge is formed, SiO2 is deposited over the surface, and the SiO2 on the ridge is etched away. Then, a p-electrode 10 of CrAu and an n-electrode 11 of AuGeNi are formed. |
| 公开日期 | 1991-05-28 |
| 申请日期 | 1989-10-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89451]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | UEHARA SHINGO,OE KUNISHIGE,OKAYASU MASANOBU,et al. Semiconductor laser. JP1991125487A. 1991-05-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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