Laser diode
文献类型：专利
| 作者 | HATORI, NOBUAKI |
| 发表日期 | 2002-07-04 |
| 专利号 | US20020085605A1 |
| 著作权人 | FUJITSU LIMITED |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Laser diode |
| 英文摘要 | A laser diode includes: a substrate having a first conductive type; a first cladding layer having a first conductive type and formed on the substrate; an active layer including a plurality of quantum dots and formed on the first cladding layer; a diffraction grating having a Bragg wavelength of lambdg and formed on the active layer; a second cladding layer having a second conductive type and formed on the active layer; a first electrode for injecting carriers having a first polarity into the active layer via the substrate; and a second electrode for injecting carriers having a second polarity into the active layer via the second cladding layer. The diffraction grating has a pitch satisfies the equation: DELTAE<=1Γ, where Γis the full width at half maximum (FWHM) of the gain spectrum of the active layer and DELTAE is an amount of shift of an energy corresponding to the Bragg wavelength lambdg from the center wavelength energy of the gain spectrum. |
| 公开日期 | 2002-07-04 |
| 申请日期 | 2001-05-15 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89456]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LIMITED |
| 推荐引用方式 GB/T 7714 | HATORI, NOBUAKI. Laser diode. US20020085605A1. 2002-07-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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