Semiconductor laser array device
文献类型：专利
| 作者 | HAMADA TAKESHI; WADA MASARU; KUME MASAHIRO; ITO KUNIO |
| 发表日期 | 1987-06-20 |
| 专利号 | JP1987137880A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser array device |
| 英文摘要 | PURPOSE:To provide a far visual field image with stable and uni-modal high output by a method wherein the titled device is provided with a light emitting part (a) waveguided by more than a specified number of grooves with the gaps between adjoining light emitting parts exceeding specified value and the groove width not exceeding the same. CONSTITUTION:The titled device is characterized by light emitting parts (a) waveguided by three or more grooves with the gaps between adjoining grooves exceeding 8mum and the groove width not exceeding 6mum. In other words, mesas are formed on the surface of a P-type GaAs substrate 1 by etching process. An N-type GaAs blocking layer 2 is formed on the substrate 1 by a first LPE growing process to hold the three grooves forming four parallel ridges by etching this wafer-surface. Next, a second LPE growing process is performed on the wafer to successively form a P-type Ga 0.55 Al 0.45 As the first clad layer 3, a non-doped Ga 0.92 Al 0.08 As active layer 4, an N-type Ga 0.55 Al 0.45 As the second layer 5, an N-type GaAs contact layer 6 in respectively specified thickness. Finally, a metal for electrode is evaporated and alloyed on the surface and backside of substrate respectively to form an N side ohmic electrode 7 and a P side ohmic electrode 8. |
| 公开日期 | 1987-06-20 |
| 申请日期 | 1985-12-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89462]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HAMADA TAKESHI,WADA MASARU,KUME MASAHIRO,et al. Semiconductor laser array device. JP1987137880A. 1987-06-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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