Semiconductor laser device
文献类型：专利
| 作者 | MORI KAZUTAKA; YAGI TETSUYA |
| 发表日期 | 1990-10-12 |
| 专利号 | JP1990253686A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a high catastrophic optical damage(COD) level and realize a high output by a method wherein all the respective layers of a laser device are made to protrude at least near the light emitting edge of the laser device. CONSTITUTION:A first conductivity type GaAs substrate 1 is made to protrude at least near is light emitting edge by etching its center part. A first conductivity type AlxGa1-xAs first cladding layer 2 and an AlyGa1-yAs active layer 3 (wherein y |
| 公开日期 | 1990-10-12 |
| 申请日期 | 1989-03-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89476]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | MORI KAZUTAKA,YAGI TETSUYA. Semiconductor laser device. JP1990253686A. 1990-10-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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