Halbleiterlaser und Verfahren zu seiner Herstellung.
文献类型：专利
| 作者 | HIRAYAMA YOSHIYUKI YOKOHAMA-SHI 221 JP; SHIMIZU HITOSHI YOKOHAMA-SHI 221 JP; SUGATA SUMIO YOKOHAMA-SHI 221 JP |
| 发表日期 | 1995-03-09 |
| 专利号 | DE69201286D1 |
| 著作权人 | THE FURUKAWA ELECTRIC CO. LTD. TOKIO/TOKYO JP |
| 国家 | 德国 |
| 文献子类 | 授权发明 |
| 其他题名 | Halbleiterlaser und Verfahren zu seiner Herstellung. |
| 英文摘要 | There is provided a high-quality semiconductor laser device having a current confinement feature along with a method of manufacturing the same in a simple manner. The upper clad layer 4 of a semiconductor laser device is a semiconductive layer made of a compound of elements of the III and V groups doped with an amphoteric impurity substance and the electric resistance of the lateral slopes is greater on the top of the mesa than on the upper clad layer 4 of the mesa. A method of manufacturing a semiconductor laser device comprises a step of repeating a cycle of crystal growth operation of sequentially forming a layer of an element of the III group, a layer of an amphoteric impurity substance and a layer of an element of the V group on said substrate by means of an MBE technique to produce said upper clad layer made of a compound of elements of the III and V groups. |
| 公开日期 | 1995-03-09 |
| 申请日期 | 1992-08-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89489]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THE FURUKAWA ELECTRIC CO. LTD. TOKIO/TOKYO JP |
| 推荐引用方式 GB/T 7714 | HIRAYAMA YOSHIYUKI YOKOHAMA-SHI 221 JP,SHIMIZU HITOSHI YOKOHAMA-SHI 221 JP,SUGATA SUMIO YOKOHAMA-SHI 221 JP. Halbleiterlaser und Verfahren zu seiner Herstellung.. DE69201286D1. 1995-03-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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