Semiconductor laser
文献类型：专利
| 作者 | TSURUTA TORU |
| 发表日期 | 1988-12-13 |
| 专利号 | JP1988305582A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a single longitudinal mode laser easily, by etching/removing an active layer on a position where an internal reflection surface is located and next by burying a clad layer again. CONSTITUTION:After a clad layer 6, an active layer 7, a first clad layer 8, and a mask layer 14 are formed on a substrate 1, a striped opening is formed from a resist in the mask layer 14 perpendicularly to the active layer 7 by photolithography. The resist is used as a mask to etch the layer 14 and to form an opening. Next, after the resist is removed, the layer 14 is used as a mask to form an opening 13 in the first clad layer 8 so as to attain to the active layer 7. The etching is performed more to form an internal reflection surface 14 on the active layer 7 and next a second clad layer 9 is made to grow. Hence, a single longitudinal mode laser with a low threshold current can be obtained easily. |
| 公开日期 | 1988-12-13 |
| 申请日期 | 1987-06-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89492]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | TSURUTA TORU. Semiconductor laser. JP1988305582A. 1988-12-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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