Manufacture of semiconductor laser
文献类型：专利
| 作者 | WATANABE NOZOMI; FUKUNAGA TOSHIAKI; HASHIMOTO AKIHIRO |
| 发表日期 | 1990-12-06 |
| 专利号 | JP1990296383A |
| 著作权人 | HIKARI GIJUTSU KENKYU KAIHATSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To enable an excellent output light of stable longitudinal and transverse modes and of a single wavelength to be emitted for minimizing the astigmatic difference by a method wherein V-shaped grooves with inner walls of (111) surfaces are formed on an Si (001) substrate making off-angles in the (110) direction, and crystalline layer of III-V compound semiconductor. CONSTITUTION:Multiple V-shaped grooves are formed on the surface of an Si (001) substrate 21 making off-angles in the (110) direction in parallel with the direction orthogonal to the off-angle as well at specific interval in the off- angle direction so as to make the inner walls cover the (111) surfaces while III-V compound semiconductor crystalline layers in sectional angular shape i.e., a clad layer 25, an active layer 26, another clad layer 27 and a p-type GaAs layer 28 are formed only on a narrow structure flat part between the V-shaped grooves 23. Through these procedures, an excellent output light of stable longitudinal and transverse modes and of a single wavelength can be emitted for minimizing the astigmatic difference. |
| 公开日期 | 1990-12-06 |
| 申请日期 | 1989-05-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89495]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HIKARI GIJUTSU KENKYU KAIHATSU KK |
| 推荐引用方式 GB/T 7714 | WATANABE NOZOMI,FUKUNAGA TOSHIAKI,HASHIMOTO AKIHIRO. Manufacture of semiconductor laser. JP1990296383A. 1990-12-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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