Semiconductor provided with in-rich layer and manufacture thereof
文献类型：专利
| 作者 | SUKEGAWA TOKUZO; TANAKA AKIRA |
| 发表日期 | 1992-09-02 |
| 专利号 | JP1992246869A |
| 著作权人 | SUKEGAWA TOKUZO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor provided with in-rich layer and manufacture thereof |
| 英文摘要 | PURPOSE:To enable a semiconductor device where a GaInP mixed crystal is epitaxially grown on a GaP substrate to be simplified in manufacturing process and lessened in cost. CONSTITUTION:When a GaInP mixed crystal 5 is made to grow on a GaP substrate 1, a GaInP layer 4 rich in In is interposed between the substrate 1 and the mixed crystal 5. The In-rich GaInP layer 4 serving as a lattice nonconformity buffer layer can be formed in a single layer, so that a manufacturing process can be simplified and a GaInP mixed crystal can be easily grown on GaP substrate. |
| 公开日期 | 1992-09-02 |
| 申请日期 | 1991-01-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89497]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUKEGAWA TOKUZO |
| 推荐引用方式 GB/T 7714 | SUKEGAWA TOKUZO,TANAKA AKIRA. Semiconductor provided with in-rich layer and manufacture thereof. JP1992246869A. 1992-09-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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