Manufacture of semiconductor laser
文献类型：专利
| 作者 | KUMABE HISAO; SUZAKI WATARU |
| 发表日期 | 1988-05-27 |
| 专利号 | JP1988124486A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To obtain laser beams having high performance and a high output by a method wherein a first conductivity type lower clad layer, an active layer and a second conductivity type upper clad layer are formed onto a substrate and a resonator is constituted, both ends in the direction of resonance are shaped to mesa slant faces, and semiconductor layers having forbidden band width larger than the active layer are formed to the mesa slant faces. CONSTITUTION:A lower clad layer 2 consisting of P-type AlyGa1-yAs, an active layer 3 composed of AlxGa1-xAs, an upper clad layer 4 made up of N-type AlyGa1-yAs and a contact layer 5 consisting of N-type GaAs are laminated and grown onto a P-type GaAs substrate A V groove 6 orthogonal to the direction of a resonator is shaped in a region as the end surface of the resonator through etching, etc., an N-type AlzGa1-zAs layer 7 having forbidden band width larger than the active layer 3 is grown extending over the surface of the layer 5 from the wall surface of the groove 6 and the layer 3 is coated completely. Accordingly, beams are hardly absorbed on the end surface sections 11, 12 of the resonator in the layer 7, thus improving optical density, where catastrophe-optical-damage called instantaneous optical damage is generated, by one figure or more. |
| 公开日期 | 1988-05-27 |
| 申请日期 | 1986-11-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89501]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KUMABE HISAO,SUZAKI WATARU. Manufacture of semiconductor laser. JP1988124486A. 1988-05-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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