Semiconductor laser
文献类型：专利
| 作者 | HATAGOSHI GENICHI; ISHIKAWA MASAYUKI; MOGI NAOTO |
| 发表日期 | 1989-07-24 |
| 专利号 | JP1989184973A |
| 著作权人 | 株式会社東芝 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To decrease an optical power density in an active layer so as to enable a high power operation and facilitate the dimension control for obtaining a stable basic oscillation in lateral mode by a method wherein an optical waveguide layer possessed of a refractive index higher than that of a clad layer is provided in the ridge where the clad layer is partically changed in thickness. CONSTITUTION:An n-GaAlAs clad layer 11, a GaAlAs active layer 12, a p- GaAlAs clad layer 13, a p-GaAlAs optical waveguide layer 15, a p-GaAlAs clad layer 14, and a p-GaAs cap layer 17 are successively grown on an n-GaAs substrate 10. Parts of the cap layer 17, the clad layer 14, the optical waveguide layer 15, and the clad layer 13 are removed through an etching leaving a central ridge section unremoved. Next, an n-GaAlAs current constriction layer 16 is made to grow thereon. The formation of the current constriction layer 16 is made through a method such as an MOCVD growth, a lift-off of the central ridge section, an MOCVD selective growth using an SiO2 mask, or the like. After the formation of the current constriction layer 16, the mask of the ridge section is removed and a p-GaAs contact layer 18 is made to grow thereon, and lastly electrodes 19 and 20 are formed. |
| 公开日期 | 1989-07-24 |
| 申请日期 | 1988-01-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89508]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社東芝 |
| 推荐引用方式 GB/T 7714 | HATAGOSHI GENICHI,ISHIKAWA MASAYUKI,MOGI NAOTO. Semiconductor laser. JP1989184973A. 1989-07-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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