Manufacture of semiconductor laser
文献类型：专利
| 作者 | MATSUMOTO SHOHEI |
| 发表日期 | 1987-06-23 |
| 专利号 | JP1987139378A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To prevent the generation of projecting longitudinal stripes on an etched mirror plane by forming a stripe pattern after coating the mirror plane completely by spreading a positive type resist having a thickness of 1/2 or more the depth of the mirror plane after forming the etched mirror plane. CONSTITUTION:On an N-type substrate 1, an N-type cladding layer 2, an active layer 3, a P-type cladding layer 4, a P-type cap layer 5 are laminated and further on the surface, a pattern for an etched mirror is formed by use of a three-layer mask. By using it as an etching mask, reactive ion beam etching using chlorine gas is performed to form an etched mirror plane 10 having a predetermined depth. Next, the three-kind resist is removed and the mirror plane 10 is newly coated with a positive type resist 12 completely. A ridge guide 6 is formed on the mirror plane 10, thereby preventing the generation of projecting longitudinal stripes on the mirror plane 10. |
| 公开日期 | 1987-06-23 |
| 申请日期 | 1985-12-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89509]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | MATSUMOTO SHOHEI. Manufacture of semiconductor laser. JP1987139378A. 1987-06-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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