Semiconductor laser device
文献类型：专利
| 作者 | OTA YOSHINORI; KUBO MITSUNORI |
| 发表日期 | 1992-01-28 |
| 专利号 | JP1992024980A |
| 著作权人 | OLYMPUS OPTICAL CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain narrow line width and stable wavelength without using a diffraction grating, by constituting an optical waveguide region of material having photorefractive effect. CONSTITUTION:A lithium niobate substrate 64 is formed on the light output end surfaces 62, 63 sides of an LED chip 5 One end surface 62 is inclined from an optical axis to prevent the independent laser oscillation of the LED. Ti diffused regions (lithium niobate optical waveguides) 65, 66 having lateral confinement structure are formed on a substrate 64. The light outputted from an active layer 55 of the LED 51 travels in the optical waveguides 65, 66; a part of the light is reflected by end surfaces 67 of the optical waveguides 65, 66; the residual part is outputted as radiation light 68. The spectrum of said light 68 is narrowed by the effect of refractive index distribution 69 formed in the optical waveguides 65, 66. |
| 公开日期 | 1992-01-28 |
| 申请日期 | 1990-05-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89511]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OLYMPUS OPTICAL CO LTD |
| 推荐引用方式 GB/T 7714 | OTA YOSHINORI,KUBO MITSUNORI. Semiconductor laser device. JP1992024980A. 1992-01-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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