Semiconductor light-emitting device
文献类型：专利
| 作者 | WAKAO KIYOHIDE |
| 发表日期 | 1990-02-13 |
| 专利号 | JP1990042783A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting device |
| 英文摘要 | PURPOSE:To obtain a multibeam semiconductor laser having a low oscillation threshold value by a method wherein a waveguide is formed in a position where a light beam from an active layer is not coupled optically to a light guide layer via a clad layer and the beam from the active layer is coupled optically to the waveguide via the light guide layer. CONSTITUTION:A second light waveguide 14 is formed separately in a position which does not affect a laser oscillation in an active region inside a first light waveguide 13; a large part of a laser oscillation beam which has been light- emitted in the active region inside the first light waveguide 13 is radiated to the outside as a laser oscillation beam 11; its one part is scattered and becomes a scattered beam 15, which is guided to the second waveguide 14 via a light guide layer 16. Since an optical coupling degree of the scattered beam 15 transmitted via the light guide layer 16 becomes weak, its optical intensity is intensified in a groove 10; the scattered beam 15 is coupled to the second light waveguide 14; a radiation beam 12 is obtained from a laser radiation end face. Thereby, while the scattered beam 15 can be utilized and an oscillation threshold value is as low as a case of only one active region, it is possible to obtain a plurality of optical beams. |
| 公开日期 | 1990-02-13 |
| 申请日期 | 1988-08-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89513]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | WAKAO KIYOHIDE. Semiconductor light-emitting device. JP1990042783A. 1990-02-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。