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文献类型：专利
| 作者 | SUEMATSU YASUHARU; ARAI SHIGEHISA; KISHINO KATSUMI |
| 发表日期 | 1986-09-20 |
| 专利号 | JP1986042437B2 |
| 著作权人 | TOKYO KOGYO DAIGAKUCHO |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To operate the semiconductor laser by a microscopic current by a method wherein both electrodes provided on the surface of a wafer are formed into an electrode column consisting of a plurality of electrodes and the terminal resistance between the terminal electrodes is increased by connecting each electrode constituting said electrode column alternately. CONSTITUTION:On a P type or a semi-insulating semiconductor (I type) substrate 1, an N type clad layer 2, a P type light-emitting layer as an active layer, an N type clad layer as the first semiconductor crystal and an N type cap layer 5 are grown and formed into a wafer W. On this wafer W, an etching reaching the layer 2 is performed using the insulating layer 6 as a mask and a P type buried layer 8, as a P type or a P type buried layer 7 and the second semiconductor crystal, a semiconductor buried layer 9 and the like are grown on the wafer W. Then, the insulating film 11 on the wafer W ia removed, a P type impurity diffusion is performed as deep as to the layer 8 or 7, a P type electrode 12 is formed as the second electrode and after an insulating layer 13 has been coated, an etching is performed on the insulating film 11, the electrode 12 and the insulating film 13 and then an N type electrode 14 is formed as the first electrode. |
| 公开日期 | 1986-09-20 |
| 申请日期 | 1980-06-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89515]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOKYO KOGYO DAIGAKUCHO |
| 推荐引用方式 GB/T 7714 | SUEMATSU YASUHARU,ARAI SHIGEHISA,KISHINO KATSUMI. -. JP1986042437B2. 1986-09-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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