Forming method of semiconductor multilayer film and manufacture of semiconductor laser
文献类型：专利
| 作者 | MANNOU MASAYA; ONAKA SEIJI |
| 发表日期 | 1992-10-12 |
| 专利号 | JP1992286176A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Forming method of semiconductor multilayer film and manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To provide the manufacture of a semiconductor laser for increasing carrier concentration by inhibiting the lowering of the carrier concentration of a p-AlGaInP layer. CONSTITUTION:A p-AlGaAs layer 13 is grown on a p-AlGaInP cald layer 11 again in a process, in which a second eqitaxial film is grown on a semiconductor substrate. The p-AlGaAs layer 13 is formed by using a molecular beam epitaxial growth method at that time. |
| 公开日期 | 1992-10-12 |
| 申请日期 | 1991-03-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89516]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | MANNOU MASAYA,ONAKA SEIJI. Forming method of semiconductor multilayer film and manufacture of semiconductor laser. JP1992286176A. 1992-10-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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