Manufacture of semiconductor laser
文献类型：专利
| 作者 | KIMURA HIDE |
| 发表日期 | 1991-01-14 |
| 专利号 | JP1991006877A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To leave the film thickness for obtaining self-oscillation excellently in controllability by providing an etching stop signal layer of thickness, whose Al composition is different, at the upper part of an upper clad layer of thickness to be left. CONSTITUTION:An upper clad layer 13 is etched by etchant 7, and due to the path of the light deflected at the etching surfaces of an etching stop signal layer 11 and the upper clad layer 13, when the thickness d4 of the upper clad layer 13 becomes below 0.4mum, interference fringes occur gradually. This interference light becomes intensive gradually, and when the etching stop signal layer 11 is etched off completely, it vanishes. Moreover, the part of the interference light caused by the upper clad layer 13 is more intensive, the vanishing of the etching stop signal layer 11 can be judged clearly, and if the etching is stopped here, it follows that only the part of film thickness d1 being set by crystal growth remains as an upper clad layer 3 for self-oscillation, and since the crystal growth film thickness, which is higher in controllability than etching, can be applied as the film thickness of the upper clad layer 3, the controllability of film thickness d1 improves. |
| 公开日期 | 1991-01-14 |
| 申请日期 | 1989-06-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89519]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KIMURA HIDE. Manufacture of semiconductor laser. JP1991006877A. 1991-01-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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