Manufacture of semiconductor laser
文献类型：专利
| 作者 | HORIKAWA HIDEAKI; SERIZAWA YUKA; MATOBA AKIHIRO; KAWAHARA MASATO |
| 发表日期 | 1987-07-14 |
| 专利号 | JP1987158387A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To form an active layer having desired thickness in a region corresponding to a groove section, and to oscillate the title laser by low threshold currents and at a transverse fundamental mode by shaping a first conduction type lower clad layer on a substrate so as to be brought to a flat (100) face. CONSTITUTION:An N-type InP layer is formed onto a P-type InP substrate 31 through liquid-phase epitaxial growth, etc., sections up to the substrate 31 from the surface of the semiconductor layer are removed through etching in predetermined width to a striped shape in parallel with the direction of the substrate 31 to shape a striped groove 33, and an N-type InP current constriction layer 35 is formed. A P-type InP layer 37, a GaInAsP layer 39 and an N-type InP layer 41 are formed onto the substrate 31 containing the current constriction layer 35 and the groove 33 through liquid-phase epitaxial growth. The active layer 39 is changed into a striped active layer 39a, which can be oscillated at a transverse fundamental mode and has width WA, on a region corresponding to the groove 33 of the upper clad first layer 41 through a photolithographic technique. An N-type InP layer 43 and an N-type GaInAsP layer 45 are shaped in succession through a liquid-phase epitaxial growth method, etc. |
| 公开日期 | 1987-07-14 |
| 申请日期 | 1986-01-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89522]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HORIKAWA HIDEAKI,SERIZAWA YUKA,MATOBA AKIHIRO,et al. Manufacture of semiconductor laser. JP1987158387A. 1987-07-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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