Semiconductor laser device
文献类型：专利
| 作者 | SHIMIZU YUICHI; YOSHIKAWA NORIYUKI; TATSUOKA KAZUKI; ITO KUNIO |
| 发表日期 | 1989-02-01 |
| 专利号 | JP1989030288A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To achieve both the stabilization of a self-exciting oscillation and the stabilization of a lateral mode and realized a high power oscillation with low noise by a method wherein a trench reaching a semiconductor substrate is formed in a current blocking layer provided between the substrate and an active layer and the width of the trench is narrow on the substrate side and wide on the active layer side and the width of the trench on the active layer side is wider at the center part of a resonator than the one in the vicinity of the edge of the resonator. CONSTITUTION:In the region of a current blocking layer 2 between the parts from several mum to tens of mum inward from the edge of a resonator, a trench which has a wide upper part and a narrow lower part and has a stepped cross section is formed. The substrate 1 side width W1 of the trench formed in the current blocking layer 2 is 0.5-3mum and the cladding layer side width W2 is not less than 6mum. The depth of the stepped part D of the trench is 0.2-1mum. In the regions between the edge of the resonator and the part from several mum to tens of mum inward from both the ends of the resonator, the upper width W4 and the lower width W3 of the trench are 4-8mum and 0.5-3mum respectively. The width W3 may be equal to the width W1 but the width W2 must be larger than the width W4. |
| 公开日期 | 1989-02-01 |
| 申请日期 | 1987-07-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89523]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | SHIMIZU YUICHI,YOSHIKAWA NORIYUKI,TATSUOKA KAZUKI,et al. Semiconductor laser device. JP1989030288A. 1989-02-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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