Growth of algainp-based compound semiconductor
文献类型：专利
| 作者 | HAMADA HIROYOSHI; HONDA MASAHARU; SHONO MASAYUKI |
| 发表日期 | 1992-04-07 |
| 专利号 | JP1992104995A |
| 著作权人 | 三洋電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Growth of algainp-based compound semiconductor |
| 英文摘要 | PURPOSE:To make oscillation wavelength of semiconductor laser into a short wavelength by growing (Al)GaInP crystal on a GaAs crystal substrate having specific plane orientation by MOCVD method. CONSTITUTION:A buffer layer 2 comprising an n type Ga0.5In0.5P, an n type clad layer 3 comprising a type (Al0.6Ga0.4)0.5In0.5P, an active layer 4 comprising undoped Ga0.5In0.5P, a p type clad layer 5 comprising p type (Al0.5Ga0.4)0.5P and a contact layer 6 comprising p type Ga0.5In0.5P are continuously grown at 4-10mum/h growth rate on a n type GaAs crystal substrate having plane direction of crystal orientation inclined from plane (100) to plane direction by 5-7 deg. by MOCVD method. Then the layer 5 and the layer 6 are selectively etched and removed to form a ridge 7 and a block layer 8 comprising n type GaAs and a cap layer 9 comprising p type GaAs are formed to give AlGaInP- based compound semiconductor. Then a n side electrode 11 is made on the surface of the substrate 1b of the semiconductor and a p side electrode 10 on the cap layer 9 to give a semiconductor laser. |
| 公开日期 | 1992-04-07 |
| 申请日期 | 1990-08-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89529]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三洋電機株式会社 |
| 推荐引用方式 GB/T 7714 | HAMADA HIROYOSHI,HONDA MASAHARU,SHONO MASAYUKI. Growth of algainp-based compound semiconductor. JP1992104995A. 1992-04-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。