Manufacture of surface emitting type semiconductor laser device
文献类型：专利
| 作者 | IGA KENICHI; IBARAKI AKIRA; KAWASHIMA KENJI; FURUSAWA KOTARO; ISHIKAWA TORU |
| 发表日期 | 1990-07-10 |
| 专利号 | JP1990177489A |
| 著作权人 | 新技術事業団 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of surface emitting type semiconductor laser device |
| 英文摘要 | PURPOSE:To prevent an undercut in an etching step, to provide excellent uniformity, reproducibility and to largely omit the number of steps by employing a GaAlAs film as a mask layer formed on the surface of a part to be depressed. CONSTITUTION:An N-type conductivity type clad layer 2, a P-type conductivity type active layer 3, a P-type conductivity type clad layer 4, and a P-type conductivity type cap layer 5 are formed in this order to form a double hetero structure, a mask layer 6 of GaAlAs is subsequently laminated, a substrate 1 is remove out of a crystal unit, a resist layer is patterned by a photolithography method, etched to a depth reaching approx. 1/2 of the thickness of the active layer 3 with a sulfuric acid etchant to form a buried part A. The resist layer is not etched in this etching step, but a cap layer, a clad layer, and the active layer 3 are etched without undercut to the mask layer 6. The resist layer is removed, cleaned and a mask layer 6 is formed. |
| 公开日期 | 1990-07-10 |
| 申请日期 | 1988-12-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89530]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 新技術事業団 |
| 推荐引用方式 GB/T 7714 | IGA KENICHI,IBARAKI AKIRA,KAWASHIMA KENJI,et al. Manufacture of surface emitting type semiconductor laser device. JP1990177489A. 1990-07-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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