Semiconductor laser device
文献类型：专利
| 作者 | SEMURA SHIGERU; KURODA TAKARO; OOTA TSUNEAKI; NAKAJIMA HISAO |
| 发表日期 | 1986-10-21 |
| 专利号 | JP1986236186A |
| 著作权人 | AGENCY OF IND SCIENCE & TECHNOL |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To make the stabilized single mode oscillation possible in the directions both longitudinal and transverse, by constituting a quantum well type structure in both side-domains of a light emitting region installed in the center of the active layer, with a semiconductor of mean composition of two kinds of compound semiconductor, and installing a photo guide layer provided with the diffraction grating on lower surface of the active layer. CONSTITUTION:On the lower clad layer 2 on the substrate 1, the resist is coated and grating pattern is formed by applying the interference of light. By chemical etching, the diffraction grating with the specified period is formed, on which the photo guide 4 is grown, and the thin film of two kinds of compound semiconductor whose forbidden band width is different with each other is laminated to form the quantum well type structure. The upper clad layer 8 and the N-type GaAs layer 9 are grown and formed. The N-type GaAs layer 9 is subjected to the mesa type etching by applying the mask. The P-type impurity is diffused, and the two kinds of semiconductor which constitute the quantum well in the impurity diffusion region 7 of the active layer 5 are alloyed. As compared with the non-diffusion region 6, the forbidden band width is made larger and the refraction index is made smaller. The mask is eliminated, the region 7 is covered with the insulative film 10, the N-side electrode 11 and the P-side electrode 12 are deposited, and the cleavage of both end surfaces is performed. |
| 公开日期 | 1986-10-21 |
| 申请日期 | 1985-04-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89533]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AGENCY OF IND SCIENCE & TECHNOL |
| 推荐引用方式 GB/T 7714 | SEMURA SHIGERU,KURODA TAKARO,OOTA TSUNEAKI,et al. Semiconductor laser device. JP1986236186A. 1986-10-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。