Semiconductor light-emitting device
文献类型：专利
| 作者 | MASUMOTO, ICHIRO |
| 发表日期 | 2013-10-29 |
| 专利号 | US8571081 |
| 著作权人 | RENESAS ELECTRONICS CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor light-emitting device |
| 英文摘要 | A first cladding layer is formed above a substrate. An active layer is formed above the first cladding layer. An optical confinement layer is formed above the active layer. A pair of band-like current block layers is formed above the optical confinement layer and opposed to each other through an opening extending in a first direction. A second cladding layer is formed on the current block layers and the optical confinement layer. A contact layer is formed above the second cladding layer. A mesa portion is formed by being sandwiched between a pair of groove portions. The current block layers and the opening are included in the mesa portion, and an end of each current block layer on an opposite side to the opening and a side wall of the mesa portion are spaced apart by a predetermined value or more in a second direction. |
| 公开日期 | 2013-10-29 |
| 申请日期 | 2012-05-17 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89534]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | RENESAS ELECTRONICS CORPORATION |
| 推荐引用方式 GB/T 7714 | MASUMOTO, ICHIRO. Semiconductor light-emitting device. US8571081. 2013-10-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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