Semiconductor laser device
文献类型：专利
| 作者 | HIRONAKA MISAO; MURAKAMI TAKASHI; MIHASHI YUTAKA; TAKAMIYA SABUROU |
| 发表日期 | 1985-04-12 |
| 专利号 | JP1985063978A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To contrive to improve the absorption efficiency for laser beams at the detector part and the operating characteristic by a method wherein the band gap energy of the light receiving part of the active layer at the detector part is enabled to become smaller than that of the active layer at the diode part. CONSTITUTION:The width W2 of the stripe groove 3c of the detector part 12 is larger than the width W1 of the stripe groove 3a of the laser diode part 10, and is formed in the relation of W1 |
| 公开日期 | 1985-04-12 |
| 申请日期 | 1983-09-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89544]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | HIRONAKA MISAO,MURAKAMI TAKASHI,MIHASHI YUTAKA,et al. Semiconductor laser device. JP1985063978A. 1985-04-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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