Area light emission semiconductor laser
文献类型：专利
| 作者 | ASAGA TATSUYA |
| 发表日期 | 1992-10-29 |
| 专利号 | JP1992306895A |
| 著作权人 | SEIKO EPSON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Area light emission semiconductor laser |
| 英文摘要 | PURPOSE:To enable an area light emission semiconductor laser to be remarkably lessened in element resistance by a method wherein a first buried layer low resistance is provided, and the uppermost surface of the first buried layer is set higher than that of a distributed reflection type mirror by a prescribed value and lower than that of an active layer, and the first buried layer is set lower than a prescribed value in electrical resistance. CONSTITUTION:After a resist 213 is removed, an N-type GaAs first buried layer 214 1X10OMEGAcm in electrical resistance is made to grow selectively on a part of a cylinder other than a light emitting part as buried using an SiO2 layer 212 as a mask until it reaches to a halfway point of a clad layer 206 and higher than the uppermost layer of a distributed reflection type multilayer film mirror 204 by a length of 1mum. A part of the layer 214 extending above the distributed reflection multilayer film 204 is made to serve as a path through which a current is injected from a substrate to the active layer, so that electrical resistance increases with the reduction of the buried layer 214 in contact area with the clad layer 206 if the above part of the layer 204 is smaller than 0.1mum. If the first buried layer 214 exceeds 0.1OMEGAcm in electrical resistance, an area light emission semiconductor laser of this design is increased in element resistance as the same as a case where a current is made to flow through the intermediary of a mirror 204. |
| 公开日期 | 1992-10-29 |
| 申请日期 | 1991-04-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89552]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORP |
| 推荐引用方式 GB/T 7714 | ASAGA TATSUYA. Area light emission semiconductor laser. JP1992306895A. 1992-10-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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