半導体レーザ素子
文献类型：专利
| 作者 | 山本 三郎; 森本 泰司; 佐々木 和明; 近藤 正樹 |
| 发表日期 | 1998-08-28 |
| 专利号 | JP2821150B2 |
| 著作权人 | シャープ株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ素子 |
| 英文摘要 | PURPOSE:To abate the noise made by returning laser beams by a method wherein the refractive index of a p-type clad layer is differentiated from that of an n-type clad layer while Si is specified to be a dopant of the n-type clad layer. CONSTITUTION:After depositing an n-type GaAs current stopping layer 6 on a p-type GaAs substrate 1, a V-type groove 9 is formed so that the end thereof starting from the surface thereof may reach the p-type GaAs substrate 1 and then a p-type clad layer 2 is deposited again to fill up the V-groove 9. Furthermore, an active layer 3, an Si doped n-type clad layer 4, a gap layer 5 are deposited and an (n) side electrode 7 is formed on the surface furthermore, after forming a (p) side electrode 8, a resonance surface is formed by cleavage. In such a laser element, the refractive index of the p-type clad layer 2 is less than that of the n-type clad layer 4 while the effective difference in refractive index is also small. Through these procedures, the noise properties of returning laser beams can be abated to lower the noise without thickening the clad layers and the active layer. |
| 公开日期 | 1998-11-05 |
| 申请日期 | 1988-10-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89553]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | シャープ株式会社 |
| 推荐引用方式 GB/T 7714 | 山本 三郎,森本 泰司,佐々木 和明,等. 半導体レーザ素子. JP2821150B2. 1998-08-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。