Semiconductor laser device
文献类型：专利
| 作者 | TANAKA, AKIRA; OKADA, MAKOTO; MATSUYAMA, TAKAYUKI |
| 发表日期 | 2010-12-14 |
| 专利号 | US7852893 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A semiconductor laser device includes: a substrate of a first conductivity type; a laminated body of a nitride semiconductor provided on the substrate and including at least an active layer and a cladding layer, the cladding layer being of a second conductivity type and having a ridge-shaped waveguide; a first film provided on one end surface of an optical resonator composed of the laminated body, the first film having a reflectance of 40% or more and 60% or less; and a second film provided on the other end surface of the optical resonator and having a higher reflectance than the first film. The optical resonator has a length of 400 μm or less. The one end surface serves as a light emitting surface. |
| 公开日期 | 2010-12-14 |
| 申请日期 | 2008-02-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89559]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | TANAKA, AKIRA,OKADA, MAKOTO,MATSUYAMA, TAKAYUKI. Semiconductor laser device. US7852893. 2010-12-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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