半導体レーザ
文献类型：专利
| 作者 | 本多 正治; 浜田 弘喜; 庄野 昌幸; 廣山 良治 |
| 发表日期 | 2000-06-09 |
| 专利号 | JP3075728B2 |
| 著作权人 | 三洋電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ |
| 英文摘要 | PURPOSE:To enhance a semiconductor laser in carrier concentration by a method wherein an N-type clad layer, an active layer, and a P-type clad layer all formed of AlGaInP compound semiconductor are provided onto a substrate provided with a primary surface which is inclined in a certain direction from a prescribed plane, and Zn is added to the P-type clad layer as an acceptor. CONSTITUTION:The following are formed on an N-type GaAs substrate 1 whose primary surface is inclined in a direction from a (100) plane by an angle of 7 degrees: an N-type Ga0.5In0.5P buffer layer 2 0.3mum in thickness; an N-type (Al0.6Ga0.4)0.5In0.5P clad layer 3 doped with Si as donor and 1mum; an undoped (Al0.1Ga0.9)0.5In0.5P active layer 4 0.06mum in thickness; an P-type (Al0.1Ga0.9)0.5In0.5P clad layer 5 doped with Zn and 1mum in the thickness; and a P-type GaInP contact layer 6 0.1mum in thickness. By this setup, even if a P-type clad layer is the same in an Al composition ratio, it can be enhanced in carrier concentration, so that the larger hetero barrier can be obtained. |
| 公开日期 | 2000-08-14 |
| 申请日期 | 1990-03-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89561]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三洋電機株式会社 |
| 推荐引用方式 GB/T 7714 | 本多 正治,浜田 弘喜,庄野 昌幸,等. 半導体レーザ. JP3075728B2. 2000-06-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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