Semiconductor laser device
文献类型：专利
| 作者 | TAKESHIMA MASUMI |
| 发表日期 | 1987-01-20 |
| 专利号 | JP1987011287A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To reduce an operating current significantly by a method wherein, when a semiconductor laser device is constituted by cladding layers and an activation layer between them, forbidden band widths of the cladding layers are selected to be larger than the forbidden band width of the activation layer and, in the boundary parts between them, the forbidden band width is gradually shifted with transition width of 0.05mum. CONSTITUTION:A Ga1-XAlXAs layer 16 is formed between an N type GaAs substrate 11 and an N-type blocking layer 12 to form a main part of a semiconductor laser device. A part (d) of the layer 16, adjacent to the substrate 11, is an N-type cladding layer with the thickness of 1mum and donor concentration of 5X10/cm and a part (e) is a non-doped activation layer with the thickness of 0.08mum and a part (f) adjacent to the layer 12 is a P-type cladding layer with the thickness of 0.3mum and acceptor concentration of 1X10/cm and the widths of the forbidden band is varied within the range of 5-9eV. With this constitution, the width of the forbidden band is shifted as shown by the letters (g)-(h) in the figure from the boundary part between the layers (d) and (e) to the boundary part between (e) and (f) to enclose electron hole pairs between those boundaries and the transition width of (g) and (h) is 0.05mum. |
| 公开日期 | 1987-01-20 |
| 申请日期 | 1985-07-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89565]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | TAKESHIMA MASUMI. Semiconductor laser device. JP1987011287A. 1987-01-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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