Ohmic electrode
文献类型：专利
| 作者 | KOTADO SETSUO; TSUCHIYA TOSHIO; TAKAHASHI KIYOSHI; KONAGAI MAKOTO |
| 发表日期 | 1984-04-07 |
| 专利号 | JP1984061176A |
| 著作权人 | ANRITSU DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Ohmic electrode |
| 英文摘要 | PURPOSE:To form a stable ohmic electrode by depositing an amorphous silicon thin-film layer as a high concentration layer on a compound semiconductor substrate and coating the amorphous silicon thin-film layer wit metals of several kinds. CONSTITUTION:The substrate consisting of a III family-V family compound semiconductor, a II family-VI family compound semiconductor or these compound mixed-crystal semiconductor such as a P type InP substrate 1 is washed sufficiently, and entered in a glow discharge device and the P type amorphous silicon thin-film 2 is deposited by using a glow discharge method. The decomposition of the InP substrate 1, a separation from the P substrate, etc. being at issue when forming the high concentration layer by using an alloying method, etc. can be removed because a substrate temperatue during the formation of the thin-film extends over 250-440 deg.C. A metallic thin-film layer 3 in NiCr and Au is formed to the high-concentration amorphous silicon thin-film layer being formed. Germanium may be used as said amorphous silicon thin-film 2. |
| 公开日期 | 1984-04-07 |
| 申请日期 | 1982-09-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89566]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ANRITSU DENKI KK |
| 推荐引用方式 GB/T 7714 | KOTADO SETSUO,TSUCHIYA TOSHIO,TAKAHASHI KIYOSHI,et al. Ohmic electrode. JP1984061176A. 1984-04-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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