Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | IKEDA TOSHIYUKI |
| 发表日期 | 1986-09-24 |
| 专利号 | JP1986214494A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To form a semiconductor laser having low threshold currents and high efficiency by adding a semiconductor layer having the same conduction type as that of a substrate to the outside of a groove. CONSTITUTION:One conduction type semiconductor layers 24 having the same conduction type as that of a substrate 11 are added to the outsides of grooves 21 and 22, and shape P-N junctions in the opposite direction to reverse conduction type semiconductor layers 14 (the layer functions as a clad layer in a mesa striped 20 section) and leakage currents. Accordingly, the path of leakage currents, which enter one block layer 16 through the clad layer 14 from a buffer layer 14a and pass through the substrate 11, is limited only on the side surfaces of the reverse conduction type semiconductor layers 14, thus largely reducing leakage currents regardless of the presence of active layers 13. |
| 公开日期 | 1986-09-24 |
| 申请日期 | 1985-03-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89568]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | IKEDA TOSHIYUKI. Semiconductor laser and manufacture thereof. JP1986214494A. 1986-09-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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